| ₹ 83.14 includes GST and import duties. | |
| B2B customers can avail ₹ 12.68 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The BFP 740FESD H6327 is a NPN very low-noise wideband Bipolar RF Transistor based on Infineon's reliable high volume silicon germanium carbon hetero-junction bipolar technology. The device is especially suited for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 47GHz, hence the device offers high power gain at frequencies up to 12GHz in amplifier applications. The transistor is fitted with internal protection circuits, which enhance the robustness against electrostatic discharge (ESD) and high levels of RF input power. The device is housed in a thin small flat plastic package with visible leads.
- 2kV ESD robustness (HBM) due to integrated protection circuits
- Halogen-free
Applications
Industrial, RF Communications, Power Management
Product details
| Transistor Polarity: NPN |
| Collector Emitter Voltage Max: 4.2V |
| Transition Frequency: 47GHz |
| Power Dissipation: 160mW |
| Continuous Collector Current: 45mA |
| Transistor Case Style: TSFP |
| No. of Pins: 4Pins |
| DC Current Gain hFE Min: 160hFE |
| Transistor Mounting: Surface Mount |
| Operating Temperature Max: 150°C |
| Product Range: - |
| Qualification: - |
| MSL: MSL 1 - Unlimited |
Other details
| Brand | INFINEON |
| Part Number | BFP740FESDH6327XTSA1 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them.
Bulk Discount
| Quantity | Price |
| 2 | ₹ 81.48 |
| 3-5 | ₹ 80.65 |
| 5-10 | ₹ 78.98 |
| 10+ | ₹ 77.32 |
Bulk discount will be automatically applied during checkout based on quantity.