| ₹ 220.41 includes GST and import duties. | |
| B2B customers can avail ₹ 33.61 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
TBD62785AFWG(Z,EHZ is a TBD62785A series BiCD silicon monolithic integrated circuit. It has a clamp diode for switching inductive loads built-in each output.
- 8-ch low active source type DMOS transistor array
- High output voltage is 50V (max, Ta = 25°C), large output current is -500mA (max,per 1 ch, Ta=25°C)
- Input voltage range from 0 to VCC-3.5V (Ta = -40 to 85°C, IOUT = -100mA or more, VDS=2V)
- Clamp diode forward current is 400mA (max, Ta = -40 to 85°C)
- Output leakage current is 1.0µA (max, VCC = 5.5V, VIN = VCC, Ta = 85°C)
- Current consumption is 4.0mA (max, VCC = 5.5V, VIN = 0V, Output OPEN, per 1 ch)
- Clamp diode forward voltage is 2.0V (max, IF = 350mA, Ta = 25°C)
- Turn on delay is 0.2µs (typ, VCC = 5.5V, RL = 16ohm, CL = 15pF)
- Turn off delay is 1.3µs (typ, VCC = 5.5V, RL = 16ohm, CL = 15pF)
- P-SOP18-0812-1.27-001 package, operating temperature range from -40 to 85°C
Footnotes
Please be careful about thermal conditions during use.
Product details
| Supply Voltage Min: 4.5V |
| Supply Voltage Max: 50V |
| No. of Outputs: 8Outputs |
| Output Voltage: 50V |
| Output Current: -500mA |
| Driver Case Style: PSOP |
| Product Range: - |
Other details
| Brand | TOSHIBA |
| Part Number | TBD62785AFWG(Z,EHZ |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 216.0 |
| 3-5 | ₹ 213.8 |
| 5-10 | ₹ 209.39 |
| 10+ | ₹ 204.98 |
Bulk discount will be automatically applied during checkout based on quantity.