MT29F4G16ABBDAH4-IT:D is a NAND flash device which includes an asynchronous data interface for high-performance I/O operations. This device uses a highly multiplexed 8-bit bus (I/Ox) to transfer commands, address, and data. There are five control signals used to implement the asynchronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection and monitor device status (R/B#). This hardware interface creates a low pin-count device with a standard pinout that remains the same from one density to another, enabling future upgrades to higher densities with no board redesign. A target is the unit of memory accessed by a chip enable signal. A target contains one or more NAND flash die. A NAND flash die is the minimum unit that can independently execute commands and report status. A NAND flash die, in the ONFI specification, is referred to as a logical unit (LUN).
- 4Gb density, 16-bit device width
- SLC level, 1.8V (1.7 to 1.95V) operating voltage
- Feature set D, Async interface
- Single-level cell (SLC) technology, command set: ONFI NAND flash protocol
- Program page cache mode, read page cache mode, one-time programmable (OTP) mode
- Operation completion, pass/fail condition, write-protect status
- Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
- WP# signal: write protect entire device
- Industrial operating temperature range from -40°C to +85°C, package style is 63-ball VFBGA
Product details
Flash Memory Type:
SLC NAND
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Memory Density:
4Gbit
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Memory Configuration:
256M x 16bit
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Interfaces:
Parallel
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IC Case / Package:
VFBGA
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No. of Pins:
63Pins
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Clock Frequency Max:
50MHz
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Access Time:
22ns
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Supply Voltage Min:
1.7V
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Supply Voltage Max:
1.95V
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Supply Voltage Nom:
1.8V
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IC Mounting:
Surface Mount
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Operating Temperature Min:
-40°C
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Operating Temperature Max:
85°C
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Product Range:
1.7V-1.95V SLC NAND Flash Memories
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MSL:
MSL 3 - 168 hours
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Other details
Brand |
MICRON |
Part Number |
MT29F4G16ABBDAH4-IT:D |
Quantity |
Each |
Technical Data Sheet EN |
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