AFBR-S4N66P024M is a Broadcom® 2�1 NUV-MT silicon photomultiplier array used for ultra-sensitive precision measurements of single photons. Two 6mm � 6mm SiPMs are arranged in a 2�1 element array with a pitch of 7mm. Larger areas can be covered with a SiPM-pitch of 7mm by tiling multiple arrays. The passivation layer is a clear epoxy mould compound (EMC) highly transparent down to UV wavelengths. This results in a broad response in the visible light spectrum with high sensitivity towards blue and near-UV region of the light spectrum. The array is best suited for the detection of low-level pulsed light sources, especially for detection of Cherenkov or scintillation light from the most common organic (plastic) and inorganic scintillator materials. Application includes X-ray and gamma ray detection, gamma ray spectroscopy, safety and security, nuclear medicine, positron emission tomography, life sciences, flow cytometry, high energy physics.
- Array size 13.54mm � 6.54mm, high PDE (63% at 420nm)
- Excellent SPTR and CRT
- Excellent uniformity of breakdown voltage
- Excellent uniformity of gain
- Four-side tilable, with high fill factors
- Cell pitch 40µm
- Highly transparent epoxy protection layer
- Operating temperature range from 0°C to +60°C
- Used in fluorescence-luminescence measurements, time-correlated single photon counting, astrophysics
Other details
| Brand |
BROADCOM |
| Part Number |
AFBR-S4N66P024M |
| Quantity |
Each |
| Technical Data Sheet EN |
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| Product Change Notice EN |
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