| ₹ 159.77 includes GST and import duties. | |
| B2B customers can avail ₹ 24.36 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The TSHG5510 is a 830nm high speed Infrared Emitting Diode in GaAlAs double hetero (DH) technology with high radiant power, high speed and moulded in a clear. This diode is suitable for high pulse current operation.
- High reliability
- High radiant intensity
- ±38° Angle of half sensitivity
- Low forward voltage
- Good spectral matching with Si photo-detectors
Applications
Consumer Electronics, Communications & Networking
Product details
| Forward Voltage VF Max | 1.45V |
| Operating Temperature Min | -40°C |
| Fall Time tf | 15ns |
| Operating Temperature Max | 85°C |
| Forward Current If(AV) | 100mA |
| Product Range | - |
| Automotive Qualification Standard | - |
| Rise Time | 15ns |
| Viewing Angle | 38° |
| Packaging | Each |
| Diode Case Style | T-1 3/4 (5mm) |
| MSL | - |
Other details
| Brand | VISHAY |
| Part Number | TSHG5510 |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 156.57 |
| 3-5 | ₹ 154.98 |
| 5-10 | ₹ 151.78 |
| 10+ | ₹ 148.59 |
Bulk discount will be automatically applied during checkout based on quantity.