₹ 120.37 includes GST and import duties. | |
B2B customers can avail ₹ 18.36 ITC on this product | |
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Description
The IRLZ24NPBF is a 55V single N-channel HEXFET Power MOSFET utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
- Logic-level gate drive
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
- Planar MOSFET technology
- Industry-leading quality
- �16V Gate to source voltage
- 0.30W/�C Linear derating factor
- 11A Avalanche current (IAR)
- 3.3�C/W Thermal resistance, junction to case
- 62�C/W Thermal resistance, junction to ambient
Applications
Industrial, Commercial, Power Management
Product details
Power Dissipation Pd | 45W |
Operating Temperature Max | 175�C |
Continuous Drain Current Id | 18A |
Transistor Polarity | N Channel |
No. of Pins | 3Pins |
Threshold Voltage Vgs | 2V |
Product Range | - |
Automotive Qualification Standard | - |
Drain Source Voltage Vds | 55V |
Rds(on) Test Voltage Vgs | 10V |
Transistor Case Style | TO-220AB |
On Resistance Rds(on) | 0.06ohm |
MSL | - |
Other details
Brand | INFINEON |
Part Number | IRLZ24NPBF |
Quantity | Each |
Technical Data Sheet EN | |
Product Change Notice EN |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
Bulk Discount
Quantity | Price |
2 | ₹ 117.96 |
3-5 | ₹ 116.76 |
5-10 | ₹ 114.35 |
10+ | ₹ 111.94 |
Bulk discount will be automatically applied during checkout based on quantity.