| ₹ 1513.03 includes GST and import duties. | |
| B2B customers can avail ₹ 230.74 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The SIHG73N60E-GE3 is a 650V N-channel MOSFET with super junction technology to minimize on-resistance and withstand high energy pulse. This E series MOSFET features low input capacitance, reduced switching and conduction losses and simple gate drive circuitry. It is designed for soft switching topologies. Suitable for server and telecom power supply applications.
- 100% Avalanche rated
- Low figure of merit Ron X Qg
- Ultra low gate charge
Applications
Power Management, Communications & Networking
Product details
| Power Dissipation Pd | 520W |
| Operating Temperature Max | 150�C |
| Continuous Drain Current Id | 73A |
| Transistor Polarity | N Channel |
| No. of Pins | 3Pins |
| Threshold Voltage Vgs | 2V |
| Product Range | E Series |
| Drain Source Voltage Vds | 650V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TO-247AC |
| On Resistance Rds(on) | 0.032ohm |
| MSL | MSL 1 - Unlimited |
Other details
| Brand | VISHAY |
| Part Number | SIHG73N60E-GE3 |
| Quantity | Each |
| Technical Data Sheet EN |  |
| Product Change Notice EN | |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 1482.77 |
| 3-5 | ₹ 1467.64 |
| 5-10 | ₹ 1437.38 |
| 10+ | ₹ 1407.12 |
Bulk discount will be automatically applied during checkout based on quantity.