| ₹ 7320.43 includes GST and import duties. | |
| B2B customers can avail ₹ 1116.37 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The TS1GSK64V6H is a 512M x 8 DRAM high-speed low power memory DDR3 SO-DIMM use DDR3 SDRAM and a 2048 bits serial EEPROM on a 240-pin printed circuit board. It is a Dual In-Line Memory Module and is intended for mounting into 240-pin edge connector sockets. The synchronous design allows precise cycle control with the use of system clock. The data I/O transactions are possible on both edges of DQS, range of operation frequencies, programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
- 8-bit Pre-fetch
- Internal calibration through ZQ pin
- On die termination with ODT pin
- Serial presence detect with EEPROM
- Asynchronous reset
Applications
Computers & Computer Peripherals, Portable Devices
Product details
| Memory Density: 8GB |
| Memory Speed: 1600MHz |
| Module Memory: PC3-12800 |
| Module Form Factor: 204-Pin DDR3 SO-DIMM |
| Memory Application: Notebook SODIMM |
| Supply Voltage Min: 1.425V |
| Supply Voltage Max: 1.575V |
| Supply Voltage Nom: 1.5V |
| Operating Temperature Min: 0°C |
| Operating Temperature Max: 85°C |
| Product Range: - |
Other details
| Brand | TRANSCEND |
| Part Number | TS1GSK64V6H |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 7174.02 |
| 3-5 | ₹ 7100.82 |
| 5-10 | ₹ 6954.41 |
| 10+ | ₹ 6808.0 |
Bulk discount will be automatically applied during checkout based on quantity.