MGN1S0508MC-R7 is a MGN1 series 1W SM GaN gate drive DC-DC converter. It is ideal for powering 'high side' and 'low side' gate drive circuits for GaN in bridge circuits. A choice of output voltages allows optimum drive levels for the best system efficiency. It is characterized by high isolation requirements commonly seen in bridge circuits used in motor drives and inverters, while the MGN1 industrial grade temperature rating and construction give long service life and reliability. It includes short circuit protection.
- Nominal input voltage is 5V, output voltage 1 is 8V
- Output current 1 is 125mA, typical efficiency is 61%
- Patent-protected, optimised output voltages designed to meet leading GaN devices requirements
- 3KVAC isolation test voltage 'Hi pot test', ultra low isolation capacitance
- Reverse polarity protection, characterised CMTI >200kV/µS
- Continuous barrier withstand voltage 1.1KV, characterised partial discharge performance
- Surface mount package type, single output type
- Typical switching frequency is 150KHz
- Temperature range from -40 to 105°C (specification)
Other details
| Brand |
MURATA POWER SOLUTIONS |
| Part Number |
MGN1S0508MC-R7 |
| Quantity |
Each |
| Technical Data Sheet EN |
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