₹ 46.36 includes GST and import duties. | |
B2B customers can avail ₹ 7.07 ITC on this product | |
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Description
The BFP 420F H6327 is a NPN wideband silicon Bipolar RF Transistor designed for mobile applications in which low power consumption is a key requirement. The typical transition frequency is approximately 25GHz, hence the device offers high power gain at frequencies up to 4.5GHz in amplifier applications. The device is housed in a thin small flat plastic package with visible leads.
- General purpose low-noise transistor
- Based on Infineon ?s reliable very high volume 25GHz silicon bipolar technology
- Popular in discrete oscillators
- Thin, small and flat with visible leads
- Halogen-free
Applications
Industrial, RF Communications, Power Management
Product details
Power Dissipation Pd | 210mW |
DC Collector Current | 60mA |
Collector Emitter Voltage V(br)ceo | 4.5V |
RF Transistor Case | TSFP |
Transition Frequency ft | 25GHz |
Operating Temperature Max | 150�C |
Transistor Polarity | NPN |
DC Current Gain hFE | 60hFE |
No. of Pins | 4Pins |
Product Range | - |
Automotive Qualification Standard | - |
MSL | MSL 1 - Unlimited |
Other details
Brand | INFINEON |
Part Number | BFP420FH6327XTSA1 |
Quantity | Each (Supplied on Cut Tape) |
Technical Data Sheet EN |
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Bulk Discount
Quantity | Price |
2 | ₹ 45.43 |
3-5 | ₹ 44.97 |
5-10 | ₹ 44.04 |
10+ | ₹ 43.11 |
Bulk discount will be automatically applied during checkout based on quantity.