| ₹ 81.69 includes GST and import duties. | |
| B2B customers can avail ₹ 12.46 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The SIS412DN-T1-GE3 is a 30V N-channel TrenchFET® Power MOSFET. Suitable for load switches, notebook PCs, desktop PCs and game station applications. The N-channel MOSFET for switching applications are now available with die on resistances around 1mR and with the capability to handle 85A.
- Halogen-free according to IEC 61249-2-21 definition
- 100% Rg Tested
Applications
Power Management, Consumer Electronics, Computers & Computer Peripherals
Product details
| Power Dissipation Pd | 15.6W |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 12A |
| Transistor Polarity | N Channel |
| No. of Pins | 8Pins |
| Threshold Voltage Vgs | 1V |
| Product Range | - |
| Automotive Qualification Standard | - |
| Drain Source Voltage Vds | 30V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | PowerPAK 1212 |
| On Resistance Rds(on) | 0.02ohm |
| MSL | MSL 1 - Unlimited |
Other details
| Brand | VISHAY |
| Part Number | SIS412DN-T1-GE3 |
| Quantity | Each |
| Technical Data Sheet EN |  |
| Product Change Notice EN | |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 80.06 |
| 3-5 | ₹ 79.24 |
| 5-10 | ₹ 77.61 |
| 10+ | ₹ 75.97 |
Bulk discount will be automatically applied during checkout based on quantity.