₹ 1304.14 includes GST and import duties. | |
B2B customers can avail ₹ 198.88 ITC on this product | |
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Description
The OPB710F series Reflective Object Sensor that consists of a gallium arsenide infrared emitting diode and an NPN silicon phototransistor. On each sensor, the emitting diode and detector are mounted side-by-side on parallel axes. A black plastic sleeve is attached and filled with encapsulating epoxy to cover the emitter and detector. The OPB710F ("F" versions) have a filtering material added to the epoxy to reduce the effect of ambient light. The package contains an internal barrier which prevents diode emissions from reaching the sensor directly.
- Phototransistor output
- Unfocused for sensing diffuse surface
- Clear encapsulating epoxy
- Filtered to reduce the effect of visible or fluorescent light
Applications
Automation & Process Control, Safety, Industrial
Product details
Forward Voltage | 1.5V |
Sensor Output | Phototransistor |
Sensor Mounting | Through Hole |
Forward Current If | 50mA |
Sensing Distance | 6.35mm |
Collector Emitter Voltage V(br)ceo | 30V |
Product Range | OPB710F Series |
Reverse Voltage Vr | 3V |
Other details
Brand | OPTEK TECHNOLOGY |
Part Number | OPB710F |
Quantity | Each |
Technical Data Sheet EN |
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Bulk Discount
Quantity | Price |
2 | ₹ 1278.06 |
3-5 | ₹ 1265.02 |
5-10 | ₹ 1238.93 |
10+ | ₹ 1212.85 |
Bulk discount will be automatically applied during checkout based on quantity.