₹ 899.79 includes GST and import duties. | |
B2B customers can avail ₹ 137.22 ITC on this product | |
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Description
The AUIRFB8409 is a 40V single N-channel HEXFET� Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175�C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
- Advanced process technology
- New ultra low on-resistance
- Repetitive avalanche allowed up to Tjmax
- Automotive qualified
- 175�C Operating temperature
Applications
Automotive
Warnings
ESD sensitive device, take proper precaution while handling the device.
Product details
Power Dissipation Pd | 375W |
Operating Temperature Max | 175�C |
Continuous Drain Current Id | 195A |
Transistor Polarity | N Channel |
No. of Pins | 3Pins |
Threshold Voltage Vgs | 3.9V |
Product Range | - |
Automotive Qualification Standard | AEC-Q101 |
Drain Source Voltage Vds | 40V |
Rds(on) Test Voltage Vgs | 10V |
Transistor Case Style | TO-220AB |
On Resistance Rds(on) | 0.001ohm |
MSL | - |
Other details
Brand | INFINEON |
Part Number | AUIRFB8409 |
Quantity | Each |
Technical Data Sheet EN | |
Product Change Notice EN |
All product and company names are trademarks™ or registered® trademarks of their respective holders. Use of them does not imply any affiliation with or endorsement by them. Image is for illustrative purposes only. Please refer to product description.
Bulk Discount
Quantity | Price |
2 | ₹ 881.79 |
3-5 | ₹ 872.8 |
5-10 | ₹ 854.8 |
10+ | ₹ 836.8 |
Bulk discount will be automatically applied during checkout based on quantity.