INFINEON BFP840FESDH6327XTSA1 Bipolar - RF Transistor, NPN, 2.25 V, 85 GHz, 75 mW, 35 mA, 150 hFE

The BFP 840FESD H6327 is a high performance Hetero-junction Bipolar Transistor specifically designed for 5 to 6GHz Wi-Fi applications. The device is based on Infineon's reliable high volume silicon germanium carbon technology. It provides inherently good input and output power match as well as inherently good noise match at 5 to 6GHz. The simultaneous noise and power match without loss external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the Wi-Fi application. Integrated protection elements at in and output make the device robust against ESD and excessive RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable battery powered applications in which energy efficiency is a key requirement.