| ₹ 3445.94 includes GST and import duties. | |
| B2B customers can avail ₹ 525.51 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The IXFN200N10P is a N-channel enhancement mode Power MOSFET features miniBLOC with aluminium nitride isolation, low RDS (on) HDMOSTM process, rugged polysilicon gate cell structure and unclamped inductive switching (UIS) rated.
- Fast intrinsic rectifier
- Rugged polysilicon gate cell structure
- Encapsulating epoxy meets UL94V-0, flammability classification
- Rugged polysilicon gate cell structure
- Easy to mount
- High power density
- Space savings
Applications
Power Management, Lighting
Product details
| Power Dissipation Pd | 680W |
| Operating Temperature Max | 175�C |
| Continuous Drain Current Id | 200A |
| Transistor Polarity | N Channel |
| No. of Pins | 4Pins |
| Threshold Voltage Vgs | 5V |
| Product Range | Polar(TM) HiPerFET |
| Automotive Qualification Standard | - |
| Drain Source Voltage Vds | 100V |
| Rds(on) Test Voltage Vgs | 15V |
| Transistor Case Style | ISOTOP |
| On Resistance Rds(on) | 0.0075ohm |
| MSL | - |
Other details
| Brand | IXYS SEMICONDUCTOR |
| Part Number | IXFN200N10P |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 3377.02 |
| 3-5 | ₹ 3342.56 |
| 5-10 | ₹ 3273.64 |
| 10+ | ₹ 3204.72 |
Bulk discount will be automatically applied during checkout based on quantity.