| ₹ 951.21 includes GST and import duties. | |
| B2B customers can avail ₹ 145.06 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The STW26NM60N is a 600V N-channel Power MOSFET developed using the second generation of MDmesh� technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
- 100% Avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
Applications
Industrial
Product details
| Power Dissipation Pd | 140W |
| Operating Temperature Max | 150°C |
| Continuous Drain Current Id | 20A |
| Transistor Polarity | N Channel |
| No. of Pins | 3Pins |
| Threshold Voltage Vgs | 3V |
| Product Range | - |
| Drain Source Voltage Vds | 600V |
| Rds(on) Test Voltage Vgs | 10V |
| Transistor Case Style | TO-247 |
| On Resistance Rds(on) | 0.135ohm |
| MSL | - |
Other details
| Brand | STMICROELECTRONICS |
| Part Number | STW26NM60N |
| Quantity | Each |
| Technical Data Sheet EN |  |
| Product Change Notice EN | |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 932.19 |
| 3-5 | ₹ 922.67 |
| 5-10 | ₹ 903.65 |
| 10+ | ₹ 884.63 |
Bulk discount will be automatically applied during checkout based on quantity.