N-channel enhancement mode high voltage power MOSFET suitable for use in high voltage power supplies, capacitor discharge applications, pulse circuits and laser and X-Ray generation systems applications.
- Silicon chip on Direct-Copper Bond (DCB) substrate
- Isolated mounting surface
- 4500V electrical isolation
- Moulding epoxies meet UL94V-0 flammability classification
- High voltage package
- Easy to mount
- Space savings
- High power density
Other details
| Brand |
LITTELFUSE |
| Part Number |
IXTF02N450 |
| Quantity |
Each |
| Technical Data Sheet EN |
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| Product Change Notice EN |
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