₹ 136.55 includes GST and import duties. | |
B2B customers can avail ₹ 20.82 ITC on this product | |
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Description
The RFD14N05LSM9A is a N-channel logic level Power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters and relay drivers. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3 to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits. Formerly developmental type TA09870.
- Temperature compensating PSPICE® model
- Can be driven directly from CMOS, NMOS and TTL circuits
- Peak current vs. pulse width curve
- UIS Rating curve
Applications
Power Management, Motor Drive & Control, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
Channel Type: N Channel |
Drain Source Voltage Vds: 50V |
Continuous Drain Current Id: 14A |
Drain Source On State Resistance: 0.1ohm |
Transistor Case Style: TO-252AA |
Transistor Mounting: Surface Mount |
Rds(on) Test Voltage: 5V |
Gate Source Threshold Voltage Max: 2V |
Power Dissipation: 48W |
No. of Pins: 3Pins |
Operating Temperature Max: 175°C |
Product Range: - |
Qualification: - |
MSL: MSL 1 - Unlimited |
Other details
Brand | ONSEMI |
Part Number | RFD14N05LSM9A |
Quantity | Each (Supplied on Cut Tape) |
Technical Data Sheet EN | ![]() |
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Bulk Discount
Quantity | Price |
2 | ₹ 133.82 |
3-5 | ₹ 132.45 |
5-10 | ₹ 129.72 |
10+ | ₹ 126.99 |
Bulk discount will be automatically applied during checkout based on quantity.