| ₹ 305.21 includes GST and import duties. | |
| B2B customers can avail ₹ 46.54 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The STD65N55F3 is a STripFET� N-channel enhancement-mode Power MOSFET designed with latest refinement of unique Single Feature Size� strip-based process. The process decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high packing density for low ON-resistance, rugged avalanche characteristics and low gate charge.
- Standard threshold drive
- 100% Avalanche tested
- -55 to 175°C Operating junction temperature range
Applications
Automotive, Power Management, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds: 55V |
| Continuous Drain Current Id: 32A |
| Drain Source On State Resistance: 6.5ohm |
| Transistor Case Style: TO-252 (DPAK) |
| Transistor Mounting: Surface Mount |
| Rds(on) Test Voltage: 10V |
| Gate Source Threshold Voltage Max: 4V |
| Power Dissipation: 110W |
| No. of Pins: 3Pins |
| Operating Temperature Max: 175°C |
| Product Range: - |
| Qualification: AEC-Q101 |
| MSL: MSL 1 - Unlimited |
Other details
| Brand | STMICROELECTRONICS |
| Part Number | STD65N55F3 |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 299.11 |
| 3-5 | ₹ 296.05 |
| 5-10 | ₹ 289.95 |
| 10+ | ₹ 283.85 |
Bulk discount will be automatically applied during checkout based on quantity.