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Description
The IRF530NPBF from International Rectifier is 100V single N channel HEXFET power MOSFET in TO-220AB. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, rugged, fast switching and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage Vds is 100V
- Gate to source voltage is �20V
- On resistance Rds(on) of 90mohm at Vgs of 10V
- Power dissipation Pd of 70W at 25�C
- Continuous drain current Id of 17A at Vgs 10V and 25�C
- Operating junction temperature range from -55�C to 175�C
Applications
Power Management, Industrial, Portable Devices, Consumer Electronics
Product details
Power Dissipation Pd | 63W |
Operating Temperature Max | 175�C |
Continuous Drain Current Id | 17A |
Transistor Polarity | N Channel |
No. of Pins | 3Pins |
Threshold Voltage Vgs | 4V |
Product Range | - |
Automotive Qualification Standard | - |
Drain Source Voltage Vds | 100V |
Rds(on) Test Voltage Vgs | 10V |
Transistor Case Style | TO-220AB |
On Resistance Rds(on) | 0.09ohm |
MSL | - |
Other details
Brand | INFINEON |
Part Number | IRF530NPBF |
Quantity | Each |
Technical Data Sheet EN | |
Application Note EN | |
Product Change Notice EN |
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Bulk Discount
Quantity | Price |
2 | ₹ 127.83 |
3-5 | ₹ 126.53 |
5-10 | ₹ 123.92 |
10+ | ₹ 121.31 |
Bulk discount will be automatically applied during checkout based on quantity.