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Description
The BC109 from Multicomp are through hole, NPN low power, silicon planar epitaxial transistors in TO-18 metal can package. This device is used for switching and amplification.
- Collector emitter voltage (Vce) of 25V
- Continuous collector current (Ic) of 200mA
- Power dissipation of 600mW
- Operating junction temperature range from -65�C to 200�C
- Collector emitter saturation voltage of 600mV at Ic=100mA
- DC current gain of 40 at Ic=10�A
Applications
Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial
Product details
Power Dissipation Pd | 600mW |
DC Collector Current | 200mA |
Collector Emitter Voltage V(br)ceo | 25V |
Transition Frequency ft | 150MHz |
Operating Temperature Max | 200�C |
Transistor Polarity | NPN |
DC Current Gain hFE | 800hFE |
No. of Pins | 3Pins |
Product Range | - |
Automotive Qualification Standard | - |
Transistor Case Style | TO-18 |
MSL | - |
Other details
Brand | MULTICOMP |
Part Number | BC109 |
Quantity | Each |
Technical Data Sheet EN |
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Bulk Discount
Quantity | Price |
2 | ₹ 83.25 |
3-5 | ₹ 82.4 |
5-10 | ₹ 80.7 |
10+ | ₹ 79.0 |
Bulk discount will be automatically applied during checkout based on quantity.