| ₹ 800.17 includes GST and import duties. | |
| B2B customers can avail ₹ 122.03 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an output device in complementary general purpose amplifier applications.
- Collector to emitter voltage (Vce) of -120V
- Collector current (Ic) of -30A
- Power dissipation of 200W
- Operating junction temperature range from -55°C to 200°C
- Collector emitter breakdown Voltage of -120V
- Collector emitter saturation voltage of -3V at 20A collector current
Applications
Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial
Product details
| Power Dissipation Pd | 200W |
| DC Collector Current | -30A |
| Collector Emitter Voltage V(br)ceo | -120V |
| Transition Frequency ft | - |
| Operating Temperature Max | 200°C |
| Transistor Polarity | PNP |
| DC Current Gain hFE | 1000hFE |
| No. of Pins | 2Pins |
| Product Range | - |
| Automotive Qualification Standard | - |
| Transistor Case Style | TO-3 |
| MSL | - |
Other details
| Brand | ON SEMICONDUCTOR |
| Part Number | MJ11015G |
| Quantity | Each |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 784.17 |
| 3-5 | ₹ 776.16 |
| 5-10 | ₹ 760.16 |
| 10+ | ₹ 744.16 |
Bulk discount will be automatically applied during checkout based on quantity.