| ₹ 166.47 includes GST and import duties. | |
| B2B customers can avail ₹ 25.39 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The MJB44H11G is a 80V NPN complementary Power Transistor designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
- Low collector to emitter saturation voltage (VCE (sat) = 1V maximum at 8A)
- Fast switching speeds
- Complementary pairs simplifies designs
- ESD rating - 3B > 8000V human body model, C > 400V machine model
- 5V Emitter to base voltage (VEBO)
- 2.5�C/W Thermal resistance, junction to case
- 7.5�C/W Thermal resistance, junction to ambient
Applications
Industrial, Power Management
Product details
| Power Dissipation Pd | 50W |
| DC Collector Current | 10A |
| Collector Emitter Voltage V(br)ceo | 80V |
| Transition Frequency ft | 50MHz |
| Operating Temperature Max | 150�C |
| Transistor Polarity | NPN |
| DC Current Gain hFE | 40hFE |
| No. of Pins | 3Pins |
| Product Range | - |
| Automotive Qualification Standard | - |
| Transistor Case Style | TO-263 |
| MSL | MSL 1 - Unlimited |
Other details
| Brand | ON SEMICONDUCTOR |
| Part Number | MJB44H11G |
| Quantity | Each |
| Technical Data Sheet EN |  |
| Product Change Notice EN | |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 163.14 |
| 3-5 | ₹ 161.48 |
| 5-10 | ₹ 158.15 |
| 10+ | ₹ 154.82 |
Bulk discount will be automatically applied during checkout based on quantity.