| ₹ 96.07 includes GST and import duties. | |
| B2B customers can avail ₹ 14.65 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The RFD3055LESM9A is a N-channel enhancement-mode Power MOSFETs manufactured using the latest manufacturing process technology. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. It is designed for use in applications such as switching regulators, switching converters and relay drivers. It can be operated directly from integrated circuits.
- Temperature compensating PSPICE® model
- Peak current vs. pulse width curve
- UIS Rating curve
Applications
Power Management, Motor Drive & Control, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Channel Type: N Channel |
| Drain Source Voltage Vds: 60V |
| Continuous Drain Current Id: 11A |
| Drain Source On State Resistance: 0.107ohm |
| Transistor Case Style: TO-252AA |
| Transistor Mounting: Surface Mount |
| Rds(on) Test Voltage: 5V |
| Gate Source Threshold Voltage Max: 3V |
| Power Dissipation: 38W |
| No. of Pins: 3Pins |
| Operating Temperature Max: 175°C |
| Product Range: - |
| Qualification: - |
| MSL: MSL 1 - Unlimited |
Other details
| Brand | ONSEMI |
| Part Number | RFD3055LESM9A |
| Quantity | Each (Supplied on Cut Tape) |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 94.15 |
| 3-5 | ₹ 93.19 |
| 5-10 | ₹ 91.27 |
| 10+ | ₹ 89.35 |
Bulk discount will be automatically applied during checkout based on quantity.