| ₹ 419.04 includes GST and import duties. | |
| B2B customers can avail ₹ 63.9 ITC on this product | |
| 100% Secure Payments | 100% Genuine product |
Description
The STPSC10H065G-TR is a Power Schottky Silicon Carbide Diode features ultra high performance. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. It is especially suited for use in PFC applications and this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
- No or negligible reverse recovery
- Switching behaviour independent of temperature
- High forward surge capability
Applications
Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product details
| Product Range: 650V |
| Diode Configuration: Single |
| Repetitive Peak Reverse Voltage: 650V |
| Average Forward Current: 10A |
| Total Capacitive Charge: 28.5nC |
| Diode Case Style: TO-263 (D2PAK) |
| No. of Pins: 3 Pin |
| Operating Temperature Max: 175°C |
| Diode Mounting: Surface Mount |
| Qualification: - |
Other details
| Brand | STMICROELECTRONICS |
| Part Number | STPSC10H065G-TR |
| Quantity | |
| Technical Data Sheet EN |  |
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Bulk Discount
| Quantity | Price |
| 2 | ₹ 410.66 |
| 3-5 | ₹ 406.47 |
| 5-10 | ₹ 398.09 |
| 10+ | ₹ 389.71 |
Bulk discount will be automatically applied during checkout based on quantity.