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Description
TBD62387AFNG(Z,EL) is a TBD62387A series BiCD silicon monolithic integrated circuit. This incorporate clamp diodes for clamping a back-EMF, which generates during inductive-load drive.
- 8-ch low active sink type DMOS transistor array
- High voltage is 50V (max, Ta = 25°C), high current is 500mA/ch (max, Ta = 25°C)
- Input voltage range from 0 to VCC-3.5V (IOUT = -100mA or more, VDS=2V, output on, Ta = -40 to 85°C)
- COMMON pin voltage is 50V (max, Ta = -40 to 85°C)
- Clamp diode forward current is 400mA (max, Ta = -40 to 85°C)
- Consumption current is 60µA (per ch, typ, Ta = 25°C, VCC = 5.5V, VIN = 0V)
- Clamp diode reverse current is 1.0µA (max, VR = 50V, Ta = 85°C)
- Turn on delay is 0.6µs (typ, VCC = 5.0V, VOUT = 50V, RL = 125ohm, CL = 15pF)
- Turn off delay is 0.6µs (typ, VCC = 5.0V, VOUT = 50V, RL = 125ohm, CL = 15pF)
- SSOP20-P-225-0.65A package, operating temperature range from -40 to 85°C
Footnotes
Please be careful about thermal conditions during use.
Product details
Supply Voltage Min: 4.5V |
Supply Voltage Max: 5.5V |
No. of Outputs: 8Outputs |
Output Voltage: 50V |
Output Current: 500mA |
Driver Case Style: SSOP |
Product Range: - |
Other details
Brand | TOSHIBA |
Part Number | TBD62387AFNG(Z,EL) |
Quantity | Each (Supplied on Cut Tape) |
Technical Data Sheet EN |
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Bulk Discount
Quantity | Price |
2 | ₹ 201.97 |
3-5 | ₹ 199.91 |
5-10 | ₹ 195.79 |
10+ | ₹ 191.66 |
Bulk discount will be automatically applied during checkout based on quantity.